GaN Power Device Market to Reach USD 4.1 Billion by 2027 | CAGR 28.8% – Forencis Research

GaN Power Device Market - Global Industry Analysis and Forecast 2020 to 2027

Global GaN Power Device Market: Key Highlights

  • According to the new market research report GaN Power Device Market by Type (Power Semiconductor, Opto-Semiconductor and RF Semiconductor), by Voltage Range (Less than 200 Volt, 200–600 Volt, More than 600 Volt), by Device Type (Transistors, Diodes), by Region (North America, Asia Pacific, Europe, Middle East and Africa, South America) – Global Forecast (2020 to 2027)”, the global GaN Power Device Market is estimated to reach USD 4.1 Billion by 2027 at a CAGR of around 28.8% during the review period.
  • The GaN transistors have grown as an increase performance substitute of silicon-based transistors, with the ability of fabricating more compact devices for a given resistance value as well as breakdown the voltage as compared to silicon devices.
  • Moreover, GaN power devices can attain extremely low-resistance and high-frequency switching. These advantage of the market may lead to increase the demand of GaN power device market in the forecast period.

GaN Power Device Market

Global GaN Power Device Market: Key Market Dynamics

  • With the rising adoption of GaN devices in electric vehicles is witness to fuel the growth of the market in the forecast period. Whereas, the electric vehicles is majorly equipped with the power modules to drive the motors at the high voltage, as it helps to reduce the current leakage in between the collector and emitter terminals.
  • One of the major key concern of the GaN power device market is the high cost of materials which may restraining factor for the growth of the market. Whereas, these is one of the major issue of the market is the high expenditure on the industry processes in the supply chain.
  • Preference of Silicon Carbide (Sic) devices, in high voltage semiconductor applications is create a restraining factor for the market growth.
  • Potential use for 5G platform, where the telecom sector is focusing to enhance the network with the advantage of high capacity, lower latency as well as ubiquitous connectivity. These will lead to create an opportunities for the growth of GaN power device market in the forecast period.

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Global GaN Power Device Market: Regional Overview

  • North America:

The region is witness to create a major role of the adoption of the GaN power device market in the projected period. Whereas, the rising in the growth of the battery technology as well as the rising application of GaN power devices in electric vehicles and smartphones market, create a major opportunities of the market growth in the region. Moreover, these growing use for gallium nitride semiconductor devices in electronics as well as in the aerospace sector also grow the market demand in the forecast period.

  • Asia-Pacific:

The region is anticipate of play a major role for the growth and developments of the GaN power device market in the forecast period. Whereas, the countries such as South Korea, China & Japan are the lucrative investment destinations in the region. Moreover, the region is witness to be majorly driven by the surge in the electrical vehicles productions. Also it has been projected that the GaN based devices will soon replace the silicon power semiconductor devices which is being used in the EV. Hence, these will perform as a key driver for the growth of the GaN power device market in the projected period.

Hence, the region GaN Power Device Market will witness substantial growth with help of by the major key player presence in the region.

Global GaN Power Device Market: Key Players Overview

  • Cree:

The company is an American manufacturer and marketer of lighting-class LEDs, lighting products, as well as products for power and radio frequency applications. Also, the company is a one of the market major innovator of semiconductor products for power and radio-frequency applications and lighting-class LEDs.  In 2018, the company announced that it had signed a non-exclusive license with Nexperia BV, a Dutch company. These will lead to provides Nexperia the access to Cree’s extensive gallium nitride (GaN) power device patent portfolio, that includes more than 250 issued U.S. and foreign patents.

  • Infineon Technologies AG:

The company is a German semiconductor manufacturer, which provides a large range of semiconductor solutions, microcontrollers, LED drivers, sensors as well as Automotive & Power Management ICs. In 2019, the company had expands its CoolGaN portfolio with the two industrial grade devices which includes the CoolGaN 400 V and the CoolGaN 600 V. Whereas, infineon’s CoolGaN 600 V portfolio is also extended with a new 190 mΩ, industrial-grade HEMT. Hence, these product was being developed to fit the consumer as well as the industrial application on an optimized cost with the aim to lower the technology entry barrier.

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Published : 2020-09-09